Discrimination between electronic and optical blooming in an InSb focal-plane array under high-intensity excitation
Identifieur interne : 006992 ( Main/Repository ); précédent : 006991; suivant : 006993Discrimination between electronic and optical blooming in an InSb focal-plane array under high-intensity excitation
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Abstract
Infrared (IR) focal-plane arrays (FPA's) with high spatial resolution play an important role in military imaging. Image degradation through blooming of the FPA by either thermal or monochromatic sources seriously limits their effectiveness. However, little has been published discerning the phenomena responsible for this blooming. We studied the blooming effects in a 640 x 480 indium-antimonide (InSb) FPA with 20-μm pixel-to-pixel spacing and operated at 77 K. Electronic and optical blooming from both a high-intensity black-body source and a 4.6-μm narrow-line-width laser source was studied. A 30-μm pinhole mask was fastened directly to the FPA to achieve spatial isolation of individual pixels in order to separate the optical and electronic effects. Both sources were used to bloom the FPA with and without the mask, and images were captured and analyzed. We provide conclusive evidence that optical effects of ghosting, diffraction, and lens and housing scatter dominate, resulting in global (i.e., large area of the FPA) loss of image quality, while effects due to electronic phenomena, such as carrier-diffusion, are minimal and locally confined to on-the-order-of-one pixel. A simple model of carrier transport was constructed to provide the theoretical basis for our conclusions.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Discrimination between electronic and optical blooming in an InSb focal-plane array under high-intensity excitation</title><author><name sortKey="Wysocki, B T" uniqKey="Wysocki B">B. T. Wysocki</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Air Force Institute of Technology, Department of Engineering Physics, Wright-Patterson AFB</s1><s2>OH 45433</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Ohio</region></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Air Force Research Laboratory, Sensors Directorate, Rome Research Site</s1><s2>NY 13441</s2><s3>USA</s3><sZ>1 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">État de New York</region></placeName></affiliation></author><author><name sortKey="Marciniak, M A" uniqKey="Marciniak M">M. A. Marciniak</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Air Force Institute of Technology, Department of Engineering Physics, Wright-Patterson AFB</s1><s2>OH 45433</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Ohio</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">08-0107234</idno><date when="2008">2008</date><idno type="stanalyst">PASCAL 08-0107234 INIST</idno><idno type="RBID">Pascal:08-0107234</idno><idno type="wicri:Area/Main/Corpus">006E45</idno><idno type="wicri:Area/Main/Repository">006992</idno></publicationStmt><seriesStmt><idno type="ISSN">1350-4495</idno><title level="j" type="abbreviated">Infrared phys. technol.</title><title level="j" type="main">Infrared physics & technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Charge carrier mobility</term><term>Experimental study</term><term>Focal plane arrays</term><term>Image quality</term><term>Indium Antimonides</term><term>Infrared detector</term><term>Line width</term><term>Military application</term><term>Pixel</term><term>Radiation detector</term><term>Spatial resolution</term><term>Thermal imaging</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Détecteur rayonnement</term><term>Matrice plan focal</term><term>Détecteur IR</term><term>Etude expérimentale</term><term>Résolution spatiale</term><term>Largeur raie</term><term>Qualité image</term><term>Mobilité porteur charge</term><term>Application militaire</term><term>Imagerie thermique</term><term>Pixel</term><term>Indium Antimoniure</term><term>0757K</term><term>8920D</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Infrared (IR) focal-plane arrays (FPA's) with high spatial resolution play an important role in military imaging. Image degradation through blooming of the FPA by either thermal or monochromatic sources seriously limits their effectiveness. However, little has been published discerning the phenomena responsible for this blooming. We studied the blooming effects in a 640 x 480 indium-antimonide (InSb) FPA with 20-μm pixel-to-pixel spacing and operated at 77 K. Electronic and optical blooming from both a high-intensity black-body source and a 4.6-μm narrow-line-width laser source was studied. A 30-μm pinhole mask was fastened directly to the FPA to achieve spatial isolation of individual pixels in order to separate the optical and electronic effects. Both sources were used to bloom the FPA with and without the mask, and images were captured and analyzed. We provide conclusive evidence that optical effects of ghosting, diffraction, and lens and housing scatter dominate, resulting in global (i.e., large area of the FPA) loss of image quality, while effects due to electronic phenomena, such as carrier-diffusion, are minimal and locally confined to on-the-order-of-one pixel. A simple model of carrier transport was constructed to provide the theoretical basis for our conclusions.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1350-4495</s0></fA01><fA03 i2="1"><s0>Infrared phys. technol.</s0></fA03><fA05><s2>51</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Discrimination between electronic and optical blooming in an InSb focal-plane array under high-intensity excitation</s1></fA08><fA11 i1="01" i2="1"><s1>WYSOCKI (B. T.)</s1></fA11><fA11 i1="02" i2="1"><s1>MARCINIAK (M. A.)</s1></fA11><fA14 i1="01"><s1>Air Force Institute of Technology, Department of Engineering Physics, Wright-Patterson AFB</s1><s2>OH 45433</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Air Force Research Laboratory, Sensors Directorate, Rome Research Site</s1><s2>NY 13441</s2><s3>USA</s3><sZ>1 aut.</sZ></fA14><fA20><s1>137-145</s1></fA20><fA21><s1>2008</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>9411</s2><s5>354000183403570010</s5></fA43><fA44><s0>0000</s0><s1>© 2008 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>10 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>08-0107234</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Infrared physics & technology</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Infrared (IR) focal-plane arrays (FPA's) with high spatial resolution play an important role in military imaging. 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We provide conclusive evidence that optical effects of ghosting, diffraction, and lens and housing scatter dominate, resulting in global (i.e., large area of the FPA) loss of image quality, while effects due to electronic phenomena, such as carrier-diffusion, are minimal and locally confined to on-the-order-of-one pixel. 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